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Fujitsu FD0-510 : Interstage Certified Associate V9 Exam

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Test Number : FD0-510
Test Name : Interstage Certified Associate V9
Vendor Name : Fujitsu
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Fujitsu exam Questions

GaN HEMT Reliability: Why the trade Can’t Agree on One trying out average | FD0-510 PDF Questions and Cheatsheet

GaN high electron mobility transistors (HEMTs) are gaining traction within the semiconductor business because of their above all excessive-temperature tolerance and excessive vigor densities. As such, these instruments can exist in harsher circumstances for aerospace and army functions. but these industries require stringent great and reliability necessities for any power instruments—silicon or GaN—and that's the reason where GaN HEMTs run into complications.

A comparison of the basic electrical characteristics of a gallium nitride HEMT vs. a silicon MOSFET.

A comparison of the basic electrical traits of a gallium nitride HEMT vs. a silicon MOSFET. image used courtesy of Fujitsu  

while there are over 50 years of standardized quality assurance testing strategies for silicon vigor contraptions, there are not any such standardized assessments for comparable gallium nitride (GaN) vigor instruments.

Why can't the equal checking out strategies for silicon be reused for GaN to make sure its reliability? To answer this question, they might first study two councils focused on high-quality reliability testing: JEDEC and AEC. 

latest testing requirements: JEDEC and AEC

The Joint Electron device Engineering Council (JEDEC) is chargeable for establishing an wide set of reminiscence necessities for semiconductor circuits and storage contraptions. For greater than five many years, JEDEC has created open specifications for microelectronics starting from main memory like DDR4 to wideband gap semiconductors.

while GaN devices are included in the umbrella of wide bandgap semiconductors, and JEDEC offered one document for GaN power conversion devices in February of this yr, it only establishes checking out methods for the switching reliability of those instruments. 

The switching characteristics of silicon MOSFETs vs. gallium nitride HEMTs

The switching characteristics of silicon MOSFETs vs. gallium nitride HEMTs. picture used courtesy of Fujitsu  

The car Electronics Council (AEC) turned into formed within the 1990s by using Chrysler, Ford, and generic Motors to set up ordinary part high-quality for standardized car programs. manufacturers closely depend on AEC’s guidelines on account of its specific reliability necessities for transistors, diodes, and different discrete semiconductors. in all probability AEC is most excellent everyday by using electronic designers for its AEC-Q100 regular, which provides guidelines to verify for failure mechanisms in integrated circuits.

however AEC provides guidelines for automotive, protection, and aerospace applications, it fails to tackle constructing technologies that are more and more switching to GaN power contraptions, corresponding to communique base stations.

What are GaN HEMTs?

GaN HEMTs are container-effect transistors (FETs) that may change quicker than silicon vigor transistors. This function, mixed with GaN HEMTs' small footprint, allows for the contraptions to be more power-efficient while creating more room for exterior components. These instruments can additionally operate in larger voltages.

Simplified GaN HEMT structure

Simplified GaN HEMT structure. Screenshot used courtesy of NovaTCAD  

but as a result of there isn’t a transparent direction to test the reliability of GaN devices, it is intricate to examine device lifetime, failure fees, and software relevance.

Professor Roberto Menozzi on the institution of Parma in Italy has discussed the lack of reliability trying out for GaN-based mostly HEMT instruments. “If one looks at the scientific literature, the abilities database on GaN-based mostly HEMT reliability seems to be characterised with the aid of a few elements indicating that the maturity purpose is still a little far forward.”

If standardized testing methodology for GaN-based mostly HEMT reliability is far on the horizon, what are producers doing to help deliver fine GaN instruments in the meantime? 

businesses Create In-residence GaN HEMT Reliability checks

To make certain the reliability of GaN HEMTs, many semiconductor manufacturers have penned their personal in-condo testing procedures. here's a glimpse at what a few of these company-particular requirements seem like.

Texas devices

Sandeep R. Bahl, Texas contraptions' devices and modeling manager for GaN reliability, shares a short breakdown of TI's methodology to qualify GaN products.

First, a stress check speeds up temperature over a certain duration of time on the device. For silicon, the calculated acceleration aspect is approximately 0.7eV activation power, despite the fact, for GaN devices, the aspect can latitude from 1.05eV to 2.5eV. This range can result in unpredictable environments, which make it more durable to investigate accurate lifetimes and accurate failure modes.

Diagram of a test vehicle for an inductive switching application test.

Diagram of a test automobile for an inductive switching utility check. picture used courtesy of Texas contraptions  

TI stories few considerations trying out GaN gadgets thanks to the huge bandgap, which allows for the machine to operate at better temperatures than silicon. whereas TI adheres to JEDEC and AEC for reliability testing that includes conducting electrostatic discharge (ESD), package results, and gadget reactions in exact-use environments, Sandeep comments that for GaN, "it is left to the manufacturer to outline the checking out."

GaN techniques

Like TI, GaN techniques also sees the value in simulating severe conditions for stress exams in an effort to qualify GaN products and find failure mechanisms. GaN techniques has found the right way to regulate the checks once used on silicon vigour instruments to check GaN reliability. GaN programs’ key facets for checking out are deciding upon failure modes, guaranteeing lengthy-time period put on out, and simulating true-world functions.

in an effort to examine for minimal to no disasters, GaN methods performs strong failure mode analysis, which assessments at excessive-possibility failure modes and additionally conducts a collaborative remarks session with relied on partners. all through the evaluation, instruments are put beneath accelerated voltage, temperature, and humidity for a long duration of time. 

With JEDEC and AEC-Q101 being a groundwork for his or her trying out strategies, GaN programs is capable of identify extrinsic and intrinsic disasters.

MACOM

considering the fact that 2006, MACOM has performed trying out on GaN-on-Si expertise for defense force and defense functions for instant base station infrastructures. trying out revolves round working in high temperature, humidity, and voltage variances.

MACOM’s first look at various is known as a extremely accelerated stress test (HAST), which simulates a 20-year gadget lifetime in ninety six hours of intensive stress checking out employing JEDEC procedures. 

MACOM’s Automated Accelerated Reliability Test System can perform up to 60 devices.

MACOM’s automatic Accelerated Reliability examine system can operate up to 60 devices. photo (screenshot) used courtesy of MACOM

The next step within the trying out phase is the extreme temperature operating existence (HTOL) examination, which requires zero screw ups whereas working at the hypothesized temperatures off the datasheet specifications. The same plan goes into the “off” state to peer the breakdown behavior of the device.

The last reliability check is the accelerated lifestyles (ALT) stress examination. This verify observes the degradation and failure of the machine to examine its existence expectancy.

Infineon

Infineon technologies has developed a four-half method that qualifies its CoolGaN 600V technology and products.

the first phase requires builders to create an software profile for the GaN machine in accordance with JEDEC and AEC-Q101 guidelines. This profile contains a listing of potential stressors that the device may also encounter all the way through operation. 

The 2d part is to set up a satisfactory requirement profile, which assesses an end client's intention for the machine: its target lifespan, optimum allowed failure rate, ESD rating limits, and working humidity necessities. 

The third section seriously conducts a reliability investigation to seem for intrinsic and extrinsic failure modes. If a failure occurs when the machine wears out or certain materials deteriorate, the test yields an intrinsic failure.

Infineon’s reliability bathtub curve allows for observation of failure mechanisms over time

Infineon’s reliability bathtub curve allows for for commentary of failure mechanisms over time. graphic used courtesy of Infineon technologies

The final part involves growing degradation fashions of key disasters in GaN devices, such because the "reliability bathtub curve." This curve showcases three failure regimes: youth, the constant, and put on-out location. 

Why Do manufacturers Have Their personal trying out strategies?

The reply is standard: to preserve a competitive side. The want to stay forward of the video game is the leading cause the industry hasn't collectively created a standardized reliability and qualification verify for GaN HEMTs. each and every enterprise has its personal really expert GaN IP and crafts reliability exams for its personal devices. 

To create an business-extensive general would require diverse manufacturers to combine their talents and agree on a examine across the board for decades to come.


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